Prof. Mohamed El-Gomati BSc, MSc, DPhil, CPhys, FInstP, FRMS
Email: me1@ohm.york.ac.uk
Tel: +44 (0)1904 32 2343
Fax: +44 (0)1904 32 3224
Research Area: Physical Layer Group > Electron Optics and Nanoanalysis Lab
Professor El-Gomati obtained his BSc degree in Physics and Mathematics from the University of Tripoli in 1970 and went on to study for his MSc in California and PhD from York. He became a Professor in Electronics at the University of York in 1997. His research interests are in Surface Science and Electron Optics with particular emphasis on the development of novel instrumentation for nanos-scale tructure and analysis. He is the author and co-author of more than 200 articles and patents in these fields.
Professor El-Gomati is a trustee and the Deputy Chair of the Foundation for Science Technology and Civilisation (FSTC), is a religious advisor to a number of UK Universities and charities and speaks on the contribution of Muslims in Science, Technology and Civilisation.
Latest 30 Publications
- , The role of oxygen in secondary electron contrast of doped semiconductors in LVSEM, Proceedings SPIE - Scanning Electron Microscopes, Monterey,
978-0-8194-7654-8 ;, May, 2009 - , Recent developments in the understanding and application of backscattered and secondary electrons in the SEM, SPIE Proceedings - Scanning Electron Microscopies, Monterey,
978-0-8194-7654-8, May, 2009 - , Theory Experiment Comparison of the Electron Backscattering Factor from Solids at Low Electron Energy (250-5,000 eV), Scanning, 30(1):2-15, February, 2008
- , The role of oxygen in secondary electron contrast in doped semiconductors using low voltage scanning electron microscopy, Journal Applied Physics, 104:123713-12371, 2008
- , The secondary electron emission yield for 24 solid elements excited by primary electrons in the range 250-5000eV: A theory / experiment comparison, Scanning, 30:365-380,
0161-0457, 2008 - , Quantitative interpretation of the low-loss electron signal, Surface Science, 601(8):1804-1812, April, 2007
- , Fabrication of micro-field emitters on ceramic substrates, Microelectronic Engineering, 84(1):95-100, January, 2007
- , Stabilized emission from micro-field emitter for electron microscopy, Microelectronics and Reliability, 46(7):1209-1213, July, 2006
- , A manufacturable miniature electron beam column, Microelectronic Engineering, 83(-5):984-989, April-Septem, 2006
- , Scanning Auger Electron microscopy, Chichester, John Wiley,
978-0-470-86677-1, 2006 - , Why is it possible to detect doped regions of semiconductors in low voltage SEM: a review and update, Surface and Interface Analysis, 37(11):901 - 911, October, 2005
- , Imaging of doped Si in low and very low voltage SEM: the contrast interpretation, Journal of Electron Spectroscopy and Related Phenomena, 143(-1):235-241, May, 2005
- , Why is it that differently doped regions in semiconductors are visible in low voltage SEM?, IEEE Transactions on Electron Devices, 51(2):288-292, 2004
- , High resolution retarding field analyser, J Vac. Sci & Tech. B, 21:350-353, 2003
- , Identification of artifacts in auger electron spectroscopY due to surface topography, J Vac. Sci Tech. B, 21:744-747, 2003
- , SEM visualisation of doping in semiconductors, ICEM 15, Durban, South Africa, September, 2002
- , A small size field emission column for surface studies, ICEM 15, 323-333, Durban, South Africa, September, 2002
- , Low and very low voltage electron microscopy in semiconductor analysis, MicroScience 2002, Organised by The Royal Microscopical Society, London, July, 2002
- , SEM acquired electronic contrast of doped areas in semiconductors and its interpretation, Proceeedings of Japan Czech Conference on Nanotechnology, 144-147, Nara, Japan, 2002
- , Very low energy electron microscopy of doped semiconductors, Applied Physics Letters, 79(18):2931-2933, 2002
- , Imaging of the boron doping in silicon using low energy SEM, Ultramicroscopy, 93:223-243, 2002
- , Low energy scanning analytical microscope (LeSAM), Practical surface analysis, Nara, Japan, November, 2001
- , A very low energy electron column fr surface studies, Proceeding of EMAG, Institute of Physics Conf ser, 111-114, Dundee, September, 2001
- , Contrast reversal of doped semiconductor imaged in LVSEM, Proceeding of EMAG 2001, IoP Conf ser, 489-492, Dundee, UK, September, 2001
- , A multi-channel detector for Auger spectroscopic analysis, Proceeding of EMAG, Institute of Physics Conf ser, 69-72, Dundee UK, September, 2001
- , Imaging doped regions in a semiconductor with very low energy SEM and Auger electrons, Proceeding of EMAG 2001, Institute of Physics Conf. Ser, 489-492, Dundee, UK, September, 2001
- , A small size retarding field analyzer, Proceedings of IVMC, 11-12, Davis Calif,
0-7803-7197-6, August, 2001 - , Identification of artefacts due to surface topography in Auger analysis, Proceedings of IVMC, 241-242, Davis Calif,
0-7803-7197-6, August, 2001 - , Very low energy electron microscopy of doped semiconductors, Proceedings of 13th international Conference on Microscopy of semiconductor materials, 435-438, Oxford, March, 2001
- , Low energy SEM of doped semiconductor, Device Microscopy, Institute of Physics, London, September, 2000
- , Auger analysis of microfabricated field emission structures, Institute of Physics Conf. Ser., Rutherford Appleton Laborator, September, 2000