Dr. Atsufumi Hirohata BSc, MSc (Keio), PhD (Cantab), MInstP, SMIEEE
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Email: ah566@ohm.york.ac.uk
Homepage: http://www-users.york.ac.uk/~ah566/
Tel: +44 (0)1904 32 3245
Fax: +44 (0)1904 32 2335
Research Area: Physical Layer Group > Spintronics and Nanodevices Lab
Dr Atsufumi Hirohata has just joined the Department of Electronics in September 2007. He has over 10 years of experience in spintronics, ranging from magnetic-domain imaging to spin-current interference. Before coming to York, he was a researcher at RIKEN, a Japanese governmental research institute, for over two years, where he designed a spin-current interference device, which can be used as a spin operation in a spintronic three-terminal transistor. He was before working as a postdoctoral researcher at Tohoku University, and successfully fabricated a perfectly ordered epitaxial full-Heusler alloy films, which was the first report to their knowledge and was acknowledged by several awards. He also worked as a postdoctoral associate at Massachusetts Institute of Technology, where he demonstrated basic function of a phase-change memory, which has been recently released in a market by Intel. He received his PhD in Physics at the University of Cambridge in 2001 and then served as a research associate at the Cavendish Laboratory in order to complete his study on spin detection of optically pumped spin-polarised electrons in a semiconductor with using a ferromagnetic overlayers, which attracted great interest, resulting a few invited talks and papers. He was originally graduated from Keio University for his BSc and MSc studies in Physics.
His present research interests include fabrication of a spin operator and nano-spin motor as well as growth of a half-metallic film. Further details can be found in research and publications.
Research Interests:
Spintronics; quantum nanoelectronics
Teaching Interests:
Introductory nanotechnology; Nanoelectronics; Mathematics
Publications
- , Schottky barrier height in Fe/GaAs films, IEEE Transactions on Magnetics, 46:1737, June, 2010
- , Interfacial structure and magnetic properties of Co2FeAl0.5Si0.5/MgO heterostructures, Journal of Applied Physics, 107(10):103919, May, 2010
- , Si segregation in polycrystalline Co2MnSi films with grain-size control, Applied Physics Letters, 95:252506, December, 2009
- , Current manipulation of a vortex confined in a micron-sized Fe19Ni81 disk, Applied Physics Letters, 95:122506, September, 2009
- , Anomalous Hall voltage rectification and quantized spin-wave excitation induced by simultaneous application of dc and rf currents in a single-layered Ni81Fe19 nanoscale wire, Physical Review B, 79:224409, June, 2009
- , Observation of a bias-dependent constrained magnetic wall in a point contact, Physical Review B, 78:224418, December, 2008
- , Broadband ferromagnetic resonance of Ni81Fe19 wires using a rectifying effect, Physical Review B, 78(10):104401, September, 2008
- , A Silicon metal-oxide-semiconductor field-effect transistor Hall bar for scanning Hall probe microscopy, Review of Scientific Instruments, 79(8):083703, August, 2008
- , DC electrical response and impedance change induced by a microwave signal in a patterned ferromagnetic wire, 7036:703607, August, 2008
- , Effect of ferromagnetism on AB oscillations in a normal-metal ring, Physical Review B, 77(14):140401(R), April, 2008